NVDSH20120C: Silicon Carbide Schottky Diode, 1200V, 20A, TO-247-2LD

Datasheet: Silicon Carbide Schottky Diode
Rev. 1 (228kB)
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Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
特性   优势
     
  • Max Junction Temperature
 
  • Tj = 175 °C
  • Avalanche Rated
 
  • 166 mJ
  • High Surge Current Capacity
   
  • Positive Temperature Coefficient
   
  • Ease of Paralleling
   
  • No Reverse Recovery / No Forward Recovery
   
  • AEC-Q101 qualified and PPAP Capable
   
应用   终端产品
  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
 
  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
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NVDSH20120C Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVDSH20120C TO-247-2LD NA Tube 450 $6.6014
市场订货至交货的时间(周) : Contact Factory

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Family
Configuration
VRRM (V)
IF(ave) (A)
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IFSM (A)
IR (Max) (µA)
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NVDSH20120C  
 $6.6014 
Pb
A
H
P
 Active   
D3
Single
1200
20
1.75
119
200
TO-247-2LD
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Advantages of New Gen2 1200V SiC Diodes for Automotive and Industrial Applications
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