NVDSH20120C: Silicon Carbide Schottky Diode, 1200V, 20A, TO-247-2LD

Datasheet: Silicon Carbide Schottky Diode
Rev. 1 (228kB)
产品概览
浏览可靠性数据
查看材料成分
产品更改通知
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
特性   优势
     
  • Max Junction Temperature
  
  • Tj = 175 °C
  • Avalanche Rated
  
  • 166 mJ
  • High Surge Current Capacity
    
  • Positive Temperature Coefficient
    
  • Ease of Paralleling
    
  • No Reverse Recovery / No Forward Recovery
    
  • AEC-Q101 qualified and PPAP Capable
    
应用   终端产品
  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
  
  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
技术文档及设计资源
仿真模型 (3) 视频 (1)
数据表 (1)  
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价）
类型
外形
类型
Temperature
类型
数量
NVDSH20120C Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVDSH20120C TO-247-2LD NA Tube 450 $6.6014
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
NVDSH20120C  
 NVDSH20120C 
 $6.6014 
Pb
A
H
P
 Active   
D3
Single
1200
20
1.75
119
200
TO-247-2LD
外形
之前浏览的产品
清除列表

精选视频
Advantages of New Gen2 1200V SiC Diodes for Automotive and Industrial Applications
Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.