NTBG015N065SC1: Silicon Carbide MOSFET, N‐Channel, 650V, 15.3 mΩ, D2PAK−7L

Datasheet: MOSFET - Power, Single N-Channel, D2PAK-7L
Rev. 1 (232kB)
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性   优势
     
  • Low RDSon
 
  • 15.3 mΩ
  • High Junction Temperature
 
  • Tj = 175°C
  • 100% UIL Tested
   
  • RoHS Compliant
   
  • High Speed Switching and Low Capacitance
   
  • 650V rated
   
  • Max RDS(on) = 18.4 mΩ at Vgs = 18V, Id = 60A
   
应用   终端产品
  • DC-DC Converter
  • Boost Inverter
 
  • UPS
  • Solar
  • Power Supply
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仿真模型 (3) 数据表 (1)
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封装
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容器
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类型
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NTBG015N065SC1 Active
Pb-free
Halide free
NTBG015N065SC1 D2PAK7 (TO-263-7L HV) 1 245 Tape and Reel 800 $15.6881
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTBG015N065SC1  
 $15.6881 
Pb
H
 Active   
N-Channel
Single
650
176
15.3
250
397
175
D2PAK7 (TO-263-7L HV)
外形
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