NTH4L060N090SC1: Silicon Carbide MOSFET, N‐Channel, 900 V, 60 mΩ, TO247−4L

Datasheet: MOSFET - SiC Power, Single N-Channel
Rev. 0 (833kB)
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性   优势
     
  • High Junction Temperature
 
  • 175°C
  • 900V Rating
   
  • 100% UIL Tested
   
  • RoHS Compliant
   
应用   终端产品
  • DC-DC Converter
  • Boost Inverter
  • UPS
 
  • Solar
  • Power Devices
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数据表 (1)  
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Specifications
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具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
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类型
数量
NTH4L060N090SC1 Active
Pb-free
Halide free
NTH4L060N090SC1 TO-247-4 340CJ NA Tube 450 $5.4602
市场订货至交货的时间(周) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 2,700

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTH4L060N090SC1  
 $5.4602 
Pb
H
 Active   
N-Channel
Single
900
67
60
61.8
107
175
TO-247-4
外形
340CJ   
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