Silicon Carbide (SiC) MOSFETs | NVH4L022N120M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO247-4L

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EliteSiC  MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • On Board Charger (OBC)
  • DC/DC converters for EV/HEV

  • Automotive EV/HEV

  • Max RDS(on) = 30mΩ at Vgs =18V, Id = 60A
  • Qualified for Automotive According to AEC−Q101
  • 15V to 18V Gate Drive
  • Devices are Pb−Free and are RoHS Compliant
  • New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses

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NVH4L022N120M3S

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Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

F

M3S

1200

89

22

148

148

175

$18.3298

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可靠性数据

Die Related Summary Data

Device: NVH4L022N120M3S

Equivalent to wafer fab process: SIC

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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