Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO247-4L

Active

概览

EliteSiC  MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • On Board Charger (OBC)
  • DC/DC converters for EV/HEV

  • Automotive EV/HEV

  • Max RDS(on) = 30mΩ at Vgs =18V, Id = 60A
  • Qualified for Automotive According to AEC−Q101
  • 15V to 18V Gate Drive
  • Devices are Pb−Free and are RoHS Compliant
  • New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses

Tools and Resources

Product services, tools and other useful resources related to NVH4L022N120M3S

产品列表

如需购买产品或样品,请先登录您的安森美账号。

搜寻

Close Search

产品:

1

分享

产品系列:

可订购器件:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Reference Price

NVH4L022N120M3S

Active

CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

F

M3S

1200

89

22

148

148

175

$18.3298

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.