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FAN73711 一种单片高压侧门极驱动集成电路,可以驱动最高在 +600 V 下运行的高速 MOSFET 和 IGBT。它拥有缓冲输出级,所有 NMOS 晶体管都针对高脉冲电流驱动能力和最小交叉导通而设计。安森美半导体的高电压工艺和共模干扰抑制技术提供了高压侧驱动器在高 dv/dt 干扰情况下的稳定运行。先进的电平转换电路针对 VBS=15 V 提供了最高 VS=-9.8 V(典型值)的高压侧门极驱动器运行。当 VBS 低于指定的阈值电压时,UVLO 电路将防止故障运行。高电流和低输出电压降低特性使得此器件适用于等离子显示面板、电机驱动逆变器、开关电源、大功率 DC-DC 转换器应用中的维持和能量回收电路开关驱动器。
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Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Rise Time (ns)
Fall Time (ns)
Drive Source Current Typ (A)
Drive Sink Current Typ (A)
Turn On Prop. Delay Typ (ns)
Turn Off Prop. Delay Typ (ns)
Delay Matching
Reference Price
FAN73711MX
Active
Pb
A
H
P
SOIC-8
1
260
REEL
3000
Y
MOSFET / IGBT
1
High Side
Junction Isolation
625
21
25
15
4
4
150
150
-
$0.4844
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可靠性数据
Die Related Summary Data
Device: FAN73711MX
Equivalent to wafer fab process: 40
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
40
2
579484595
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)