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NCD(V)57252/3/5/6 are high−current dual-channel isolated IGBT gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to 32 V bias voltage on the output side. The device accepts complementary inputs and offers separate pins for Disable and Dead Time control for system design convenience. Drivers are available in wide-body SOIC−16 for >8mm Creepage and Clearance
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Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Rise Time (ns)
Fall Time (ns)
Drive Source Current Typ (A)
Drive Sink Current Typ (A)
Turn On Prop. Delay Typ (ns)
Turn Off Prop. Delay Typ (ns)
Delay Matching
Reference Price
NCD57530DWKR2G
Active
Pb
A
H
P
SOIC−16 WB LESS PINS 12 & 13
1
260
REEL
1000
F
IGBT
MOSFET
SiC MOSFET
1
Dual
Galvanic Isolation
22
36
12
10
6.5
6.5
60
60
15
$2.5035
More Details
NCD57540DWKR2G
Active
Pb
A
H
P
SOIC−16 WB LESS PINS 12 & 13
1
260
REEL
1000
F
IGBT
MOSFET
SiC MOSFET
1
Dual
Galvanic Isolation
22
36
12
10
6.5
6.5
60
60
15
$2.5035
More Details
NCV57530DWKR2G
Active
Pb
A
H
P
SOIC−16 WB LESS PINS 12 & 13
1
260
REEL
1000
F
IGBT
MOSFET
SiC MOSFET
1
Dual
Galvanic Isolation
22
36
12
10
6.5
6.5
60
60
15
$2.5035
More Details
NCV57540DWKR2G
Active
Pb
A
H
P
SOIC−16 WB LESS PINS 12 & 13
1
260
REEL
1000
F
IGBT
MOSFET
SiC MOSFET
1
Dual
Galvanic Isolation
22
36
12
10
6.5
6.5
60
60
15
$2.5035
More Details
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