NCD(V)57252/3/5/6 are high−current dual-channel isolated IGBT gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to 32 V bias voltage on the output side. The device accepts complementary inputs and offers separate pins for Disable and Dead Time control for system design convenience. Drivers are available in wide-body SOIC−16 for >8mm Creepage and Clearance
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Die Related Summary Data
Device: NCD57540DWKR2G
Equivalent to wafer fab process: BCDe
产品技术
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等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
BCDe
0
2210974820
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Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)