NCP81075: 高压侧和低压侧门极驱动器,高频率,180 V,4A 能力

Datasheet: Dual MOSFET Gate Driver, High Performance
Rev. 4 (177kB)
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NCP81075 是一款高性能双 mosfet(高压侧和低压侧)门极驱动集成电路,适用于驱动在高达 180 V 的电压下运行的高速、高电压 MOSFET。NCP81075 集成了一个驱动器集成电路和一个自举二极管,驱动能力高达 4A。 高压侧和低压侧驱动器独立控制,带有匹配的 3.5ns 典型传播延迟。 此驱动器适用于高电压降压应用、隔离电源、 2 开关和有源箝位正向转换器。该器件还可用于太阳能优化器和太阳能逆变器应用。 该零件采用 SO8,8 引脚 DFN 和 10 引脚 DFN 封装,在 -40C 至 140C 范围内进行完全规格确定。
特性
 
  • Drives two N-Channel MOSFETs in High & Low Side
  • Integrated Bootstrap Diode for High Side Gate Drive
  • Bootstrap Supply Voltage Range up to 180V
  • 4A Source, 4A Sink Output Current Capability
  • Drives 1nF Load with Typical Rise/Fall Times of 8ns/7 ns
  • Wide Supply Voltage Range 8.5V to 20V
  • Fast Propagation Delay Times (Typ. 20 ns)
  • 2 ns Delay Matching (Typical)
  • Under-Voltage Lockout (UVLO) Protection for Drive Voltage
  • Operating Junction Temperature Range of -40°C to 140°C
应用
  • Buck converter
  • isolated power supplies
  • Class D audio amplifier
  • Two switch and Active Clamp Forward Converters
  • Solar optimizer
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
STR-10-16V-BLDC-MDK-GEVB Active
Pb-free
600W, 10-16V Motor Development Board
STR-10-16V-BLDC-MDK-GEVK Active
Pb-free
600W, 10-16V Motor Development Kit
STR-16-30V-BLDC-MDK-GEVB Active
Pb-free
1kW, 16-30V Motor Development Board
STR-16-30V-BLDC-MDK-GEVK Active
Pb-free
1kW, 16-30V Motor Development board
STR-30-60V-BLDC-MDK-GEVB Active
Pb-free
1kW, 30-60V Motor Development Board
STR-30-60V-BLDC-MDK-GEVK Active
Pb-free
1kW, 30-60V Motor Development Board
STR-60-100V-BLDC-MDK-GEVB Active
Pb-free
1kW, 60-100V Motor Development Board
STR-60-100V-BLDC-MDK-GEVK Active
Pb-free
1kW, 60-100V Motor Development Board
Availability & Samples
Specifications
Interactive Block Diagram
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NCP81075DR2G Active
Pb-free
Halide free
NCP81075 SOIC-8 751-07 1 260 Tape and Reel 2500 $0.897
NCP81075MNTXG Active
Pb-free
Halide free
NCP81075 DFN-8 506CY 1 260 Tape and Reel 4000 $1.5223
NCP81075MTTXG Active
Pb-free
Halide free
NCP81075 WDFN-10 511CE 1 260 Tape and Reel 4000 $0.9775
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Rise Time (ns)
Fall Time (ns)
Drive Source Current Typ (A)
Drive Sink Current Typ (A)
Turn On Prop. Delay Typ (ns)
Turn Off Prop. Delay Typ (ns)
Delay Matching
Package Type
NCP81075DR2G  
 $0.897 
Pb
H
 Active   
MOSFET
2
High-Low
Junction Isolation
180
20
8
7
4
4
20
20
3.5
SOIC-8
NCP81075MNTXG  
 $1.5223 
Pb
H
 Active   
MOSFET
2
High-Low
Junction Isolation
180
20
8
7
4
4
20
20
3.5
DFN-8
NCP81075MTTXG  
 $0.9775 
Pb
H
 Active   
MOSFET
2
High-Low
Junction Isolation
180
20
8
7
4
4
20
20
3.5
WDFN-10
外形
751-07    506CY    511CE   
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