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公司介绍
NCP81075 是一款高性能双 mosfet(高压侧和低压侧)门极驱动集成电路,适用于驱动在高达 180 V 的电压下运行的高速、高电压 MOSFET。NCP81075 集成了一个驱动器集成电路和一个自举二极管,驱动能力高达 4A。 高压侧和低压侧驱动器独立控制,带有匹配的 3.5ns 典型传播延迟。 此驱动器适用于高电压降压应用、隔离电源、 2 开关和有源箝位正向转换器。该器件还可用于太阳能优化器和太阳能逆变器应用。 该零件采用 SO8,8 引脚 DFN 和 10 引脚 DFN 封装,在 -40C 至 140C 范围内进行完全规格确定。
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Rise Time (ns)
Fall Time (ns)
Drive Source Current Typ (A)
Drive Sink Current Typ (A)
Turn On Prop. Delay Typ (ns)
Turn Off Prop. Delay Typ (ns)
Delay Matching
Reference Price
NCP81075DR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
N
MOSFET
2
High-Low
Junction Isolation
180
20
8
7
4
4
20
20
3.5
$0.897
More Details
NCP81075MNTXG
Active
Pb
A
H
P
DFN-8
1
260
REEL
4000
Y
MOSFET
2
High-Low
Junction Isolation
180
20
8
7
4
4
20
20
3.5
$1.5223
More Details
NCP81075MTTXG
Active
Pb
A
H
P
WDFN-10
1
260
REEL
4000
Y
MOSFET
2
High-Low
Junction Isolation
180
20
8
7
4
4
20
20
3.5
$1.4008
More Details
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可靠性数据
Die Related Summary Data
Device: NCP81075DR2G
Equivalent to wafer fab process: CMOS SUB
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
CMOS SUB
2
920154574
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)
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