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Gate Drivers | NCP81075
概览
NCP81075 是一款高性能双 mosfet（高压侧和低压侧）门极驱动集成电路，适用于驱动在高达 180 V 的电压下运行的高速、高电压 MOSFET。NCP81075 集成了一个驱动器集成电路和一个自举二极管，驱动能力高达 4A。 高压侧和低压侧驱动器独立控制，带有匹配的 3.5ns 典型传播延迟。 此驱动器适用于高电压降压应用、隔离电源、 2 开关和有源箝位正向转换器。该器件还可用于太阳能优化器和太阳能逆变器应用。 该零件采用 SO8，8 引脚 DFN 和 10 引脚 DFN 封装，在 -40C 至 140C 范围内进行完全规格确定。
应用
- Buck converter
- isolated power supplies
- Class D audio amplifier
- Two switch and Active Clamp Forward Converters
- Solar optimizer
终端产品
- Motor Drives
特性
- Drives two N-Channel MOSFETs in High & Low Side
- Integrated Bootstrap Diode for High Side Gate Drive
- Bootstrap Supply Voltage Range up to 180V
- 4A Source, 4A Sink Output Current Capability
- Drives 1nF Load with Typical Rise/Fall Times of 8ns/7 ns
- Wide Supply Voltage Range 8.5V to 20V
- Fast Propagation Delay Times (Typ. 20 ns)
- 2 ns Delay Matching (Typical)
- Operating Junction Temperature Range of -40°C to 140°C
- Under-Voltage Lockout (UVLO) Protection for Drive Voltage
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可订购器件:
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产品
NCP81075DR2G
Active
Pb
A
H
P
SOIC-8
1
260
REEL
2500
N
MOSFET
2
High-Low
Junction Isolation
180
20
8
7
4
4
20
20
3.5
$0.897
More Details
NCP81075MNTXG
Active
Pb
A
H
P
DFN-8
1
260
REEL
4000
Y
MOSFET
2
High-Low
Junction Isolation
180
20
8
7
4
4
20
20
3.5
$1.5223
More Details
NCP81075MTTXG
Active
Pb
A
H
P
WDFN-10
1
260
REEL
4000
Y
MOSFET
2
High-Low
Junction Isolation
180
20
8
7
4
4
20
20
3.5
$1.4008
More Details
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