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ON Semiconductor Announces New Full Silicon Carbide MOSFET Module Solutions for Charging Electric Vehicles at APEC 2021  Chinese German Italian Japanese Korean

Comprehensive portfolio of wide bandgap devices for high-performance charging solutions

APEC 2021 - PHOENIX, Ariz. – June 7, 2021 – ON Semiconductor® (Nasdaq:ON), driving energy efficient innovations, has announced a pair of 1200 V full silicon carbide (SiC) MOSFET 2-PACK modules further enhancing their range of products suitable for the challenging electric vehicle (EV) market.

As sales of EV continue to grow, infrastructure must be rolled-out to meet the needs of drivers, providing a network of rapid charging stations that will allow them to complete their journeys quickly and without ‘range anxiety’. Requirements in this sector are rapidly evolving, requiring power levels in excess of 350 kW and efficiencies of 95% becoming the ‘norm’. Given the diverse environments and locations in which these chargers are deployed, compactness, robustness and enhanced reliability are all challenges that designers face.

The new 1200 V M1 full SiC MOSFET 2 pack modules, based upon planar technology and suited to a drive voltage in the range of 18-20 V, are simple to drive with negative gate voltages. The larger die reduces thermal resistance compared to trench MOSFETs, thereby reducing die temperature at the same operating temperature.

Configured as a 2-PACK half bridge, the NXH010P120MNF1 is a 10 mohm device housed in an F1 package while the NXH006P120MNF2 is a 6 mohm device in an F2 package. The packages feature press-fit pins making them ideal for industrial applications and an embedded negative temperature coefficient (NTC) thermistor facilitates temperature monitoring.

As part of the ON Semiconductor EV charging ecosystem, the new SiC MOSFET modules have been designed to work alongside driver solutions such as the NCD5700x devices . The recently introduced NCD57252 dual channel isolated IGBT/MOSFET gate driver offers 5 kV of galvanic isolation and can be configured for dual low-side, dual high-side or half-bridge operation.

The NCD57252 is housed in a small SOIC-16 wide body package and accepts logic level inputs (3.3 V, 5 V & 15 V). The high current device (source 4.0 A / sink 6.0 A at Miller plateau voltage) is suitable for high-speed operation as typical propagation delays are 60ns.

Complementing the new modules and gate driver are the ON Semiconductor SiC MOSFETs that provide superior switching performance and enhanced thermals when compared to similar silicon devices. This results in improved efficiency, greater power density, improved electromagnetic interference (EMI) and reduced system size and weight.

The recently-announced 650 V SiC MOSFETs employ a novel active cell design combined with advanced thin wafer technology enabling a best-in-class figure of merit (FoM) for (RDS(on)*area). Devices in the series such as the NVBG015N065SC1, NTBG015N065SC1, NVH4L015N065SC1 and NTH4L015N065SC offer the lowest RDS(on) in the market for D2PAK7L / TO247 packaged MOSFETs.

The 1200 V and 900 V N-channel SiC MOSFETs feature a small chip size that reduces device capacitance and gate charge (Qg – as low as 220 nC), reducing switching losses when operating at the high frequencies demanded by EV chargers.

During APEC 2021, ON Semiconductor will showcase SiC solution for industrial applications as well as presenting exhibitor seminars about the company’s solutions for off-board EV-charging. To register as a visitor to APEC 2021, please visit http://apec-conf.org/conference/registration/ .

Additional resources & documents:

Landing page: Energy Infrastructure

Video: 25kW SiC Module Fast EV DC Charger Power Stage

White paper: Demystifying Fast DC Charging: From Top to Bottom

Articles: Developing A 25-kW SiC-Based Fast DC Charger (Part 1): The EV Application, Developing A 25-kW SiC-Based Fast DC Charger (Part 2): Solution Overview

关于安森美半导体
安森美半导体(ON Semiconductor,美国纳斯达克上市代号:ON)致力于推动高能效电子创新,使世界更绿、更安全、包容及互联。公司已转变为客户首选的电源、模拟、传感器及联结方案供应商。公司卓越的产品帮助工程师解决他们在汽车、工业、云电源及物联网(IoT)应用中最独特的设计挑战。

安森美半导体运营反应敏锐、可靠的供应链及品质项目,及强大的 环境、社会、公司管治(ESG)计划。公司总部位于美国亚利桑那州菲尼克斯,在其主要市场运营包括制造厂、销售办事处及设计中心在内的全球业务网络。

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安森美半导体和安森美半导体图标是 Semiconductor Components Industries, LLC的注册商标。所有本文中出现的其它品牌和产品名称分别为其相应持有人的注册商标或商标。虽然公司在本新闻稿提及其网站,但此稿并不包含其网站中有关的信息。

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