Silicon Carbide (SiC) MOSFETs | NTBL045N065SC1

碳化硅（SiC）MOSFET – EliteSiC系列，33 mohm，650V，M2，TOLL封装

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概览

碳化硅MOSFET 采用全新工艺技术，相较于硅基款，能够带来更加优越的开关性能和更高的可靠度。此外，低导通电阻和紧凑的芯片尺寸确保了低电容和栅极电荷，为系统带来更高的效率、更快的工作频率、更高的功率密度、更低的EMI，以及更小的系统尺寸。TOLL开尔文源极配置封装和更低的寄生源电感，提供更好的热性能和优秀的开关性能，以及1级湿度敏感度。

  • 电信
  • 云系统
  • 工业
  • 电信电源
  • 服务器电源
  • UPS / ESS
  • 太阳能
  • 最高结温175°C
  • 无引线SMD薄封装
  • 开尔文源极配置
  • 超低栅极电荷 (QG(tot) = 105 nC)
  • 低有效输出电容（Coss = 162 pF）
  • 体二极管反向恢复电流为零
  • Typ. RDS(on) = 33 mΩ @ Vgs : 18V
  • 650V额定电压
  • 100%通过雪崩测试
  • 无铅，无卤素/溴化阻燃剂（RFB），符合RoHS标准
  • 1级湿度敏感度
  • 内部栅极电阻： 3.1 Ω

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NTBL045N065SC1

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CAD Model

Pb

A

H

P

H-PSOF8L 9.90x10.38x2.30, 1.20P

100DC

1

260

REEL

2000

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M2

650

73

33

105

162

175

$6.7164

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