电池化成 - 框图

电池化成是电池制造中的关键工艺，用于在锂离子电芯投入使用前对其进行激活与验证。化成系统通过精确的控制和监测，确保电芯的性能、可靠性、安全性以及电芯间质量的一致性。

"longDescription": "Detailed Description of Each Block", "blocks": [ { "name": "AFE", "function": "Converts AC input power into a regulated high-voltage DC bus while improving power factor and reducing harmonic distortion.", "theory_of_operation": "Uses rectification and active power factor correction to create a stable DC bus from single-phase or three-phase AC power.", "interaction": "Receives 1-3 Phase AC Input and provides DC power to the Isolated DC/DC stage. Controlled by the Isolated Gate Driver.", "category": "onsemi", "connection": [ "Isolated DC/DC" ] }, { "name": "Isolated DC/DC", "function": "Provides galvanically isolated DC power conversion between the AFE and downstream battery-formation circuitry.", "theory_of_operation": "Uses high-frequency switching and transformer isolation to transfer energy while maintaining electrical isolation.", "interaction": "Receives power from the AFE, is controlled by the Isolated Gate Driver, and supplies the DC Link.", "category": "onsemi", "connection": [ "DC-DC Stage", "Voltage, Temp & Current Sensing" ] }, { "name": "DC-DC Stage", "function": "Regulates DC Link voltage into precisely controlled charge or discharge current for battery formation processes.", "theory_of_operation": "Uses high-efficiency switching converters to generate programmable voltage and current levels.", "interaction": "Receives power from the DC Link and collaborates with sensing and gate-driver circuits for closed-loop control.", "connection": [ "eFuse/FET Matrix", "Voltage, Temp & Current Sensing" ], "sub_blocks": [ { "name": "Synchronous Buck Boost", "function": "Provides bidirectional voltage conversion to support varying battery voltages during charging and discharging.", "theory_of_operation": "Employs synchronous MOSFET switching topology operating in buck, boost, or buck-boost modes.", "interaction": "Receives power from the DC Link and transfers regulated power to the eFuse/FET Matrix.", "category": "onsemi", "connection": [] } ] }, { "name": "Cell Switching", "function": "Routes power to individual battery cells or cell groups during formation and testing.", "theory_of_operation": "Uses electronically controlled switching devices to selectively connect or disconnect battery channels.", "interaction": "Receives power from the DC-DC stage and delivers power to the battery under controller supervision.", "connection": [ "Single or Multi Cell Battery", "Voltage, Temp & Current Sensing" ], "sub_blocks": [ { "name": "eFuse/FET Matrix", "function": "Provides protected switching and routing of power to battery cells.", "theory_of_operation": "Uses MOSFET arrays and electronic fuse functionality to control current paths and protect against faults.", "interaction": "Receives regulated power from the Synchronous Buck Boost stage and connects selected cells to the output.", "category": "onsemi", "connection": [] } ] }, { "name": "Isolated Gate Driver", "function": "Provides isolated drive signals for high-voltage power switches used in AC/DC and isolated DC/DC stages.", "theory_of_operation": "Transfers PWM control information across an isolation barrier while delivering sufficient current to switch power transistors efficiently.", "interaction": "Receives control signals from the controller and drives switches within the AFE and Isolated DC/DC stages.", "category": "onsemi", "connection": [ "AFE", "Isolated DC/DC" ] }, { "name": "Voltage, Temp & Current Sensing", "function": "Measures electrical and thermal parameters throughout the battery formation system.", "theory_of_operation": "Uses sensors, amplifiers, ADC interfaces, and signal conditioning circuits to provide feedback measurements.", "interaction": "Monitors DC Link, DC-DC stage, cell-switching circuitry, and exchanges information with the controller.", "category": "onsemi", "connection": [ "Controller" ] }, { "name": "GaN/FET Gate Driver", "function": "Generates gate-drive signals for power MOSFET or GaN switches in battery switching circuitry.", "theory_of_operation": "Delivers high-current gate pulses with appropriate timing and protection features to enable efficient switching.", "interaction": "Receives control commands from the controller and drives the eFuse/FET Matrix and related switching devices.", "category": "onsemi", "connection": [ "eFuse/FET Matrix", "Synchronous Buck Boost" ] }, { "name": "Auxiliary Power Supply", "function": "Generates low-power supply rails required by control, sensing, and communication circuits.", "theory_of_operation": "Converts AC input into multiple regulated low-voltage outputs for system electronics.", "interaction": "Receives 1-Phase AC Input and supplies power to the Isolated Gate Driver and LV DC/DC Conversion.", "category": "onsemi", "connection": [ "Isolated Gate Driver", "LV DC/DC Conversion" ] }, { "name": "LV DC/DC Conversion", "function": "Produces regulated low-voltage rails for digital and analog circuitry.", "theory_of_operation": "Uses switching or linear conversion techniques to generate stable operating voltages.", "interaction": "Receives power from the Auxiliary Power Supply and supplies the controller.", "category": "onsemi", "connection": [ "Controller" ] }, { "name": "Controller", "function": "Central processing and control element that coordinates power conversion, sensing, protection, and communications.", "theory_of_operation": "Executes control algorithms, processes sensor inputs, and generates command signals for power and communication circuits.", "interaction": "Communicates bidirectionally with sensing, gate drivers, interface components, and communication networks.", "category": "Third party", "connection": [ "Voltage, Temp & Current Sensing", "GaN/FET Gate Driver", "Interface Components", "Isolated Gate Driver" "Communication" ] }, { "name": "Interface Components", "function": "Signal conditioning and interface circuitry connecting the controller to external communication systems.", "theory_of_operation": "Performs level shifting, isolation, buffering, and protocol adaptation.", "interaction": "Exchanges signals with the controller and communication subsystem.", "category": "onsemi", "connection": [ "Controller" ] }, { "name": "Communication", "function": "External communication subsystem enabling monitoring, control, and data exchange.", "theory_of_operation": "Implements industrial communication protocols through physical-layer and network-interface circuits.", "interaction": "Communicates with the controller through interface circuitry and protected network connections.", "connection": [ "Controller", "Ethernet", "CAN-FD", "RS485" ], "sub_blocks": [ { "name": "Industrial Network", "function": "Provides communication connectivity between the formation system and higher-level control infrastructure.", "theory_of_operation": "Transfers monitoring, configuration, and control data using industrial networking protocols.", "interaction": "Connected to interface components, ESD protection, and communication ports.", "category": "onsemi", "connection": [] }, { "name": "ESD Protection", "function": "Protects communication interfaces from electrostatic discharge and transient events.", "theory_of_operation": "Uses transient suppression devices to divert destructive surge currents away from sensitive electronics.", "interaction": "Installed between external communication connectors and internal network electronics.", "category": "onsemi", "connection": [] } ] }, { "name": "Ethernet", "function": "Provides Ethernet communication connectivity.", "theory_of_operation": "Transfers packet-based network data across wired Ethernet links.", "interaction": "Interfaces through ESD protection and industrial networking circuitry.", "category": "Third party", "connection": [] }, { "name": "CAN-FD", "function": "Provides high-speed Controller Area Network communication.", "theory_of_operation": "Transfers robust differential communication frames using the CAN-FD protocol.", "interaction": "Interfaces through ESD protection and industrial networking circuitry.", "category": "Third party", "connection": [] }, { "name": "RS485", "function": "Provides differential serial communication capability.", "theory_of_operation": "Uses balanced differential signaling for reliable communication over long distances.", "interaction": "Interfaces through ESD protection and industrial networking circuitry.", "category": "Third party", "connection": [] } ] }, { "name": "1-3 Phase AC Input", "function": "Primary AC power source for the main formation power stage.", "theory_of_operation": "Supplies single-phase or three-phase AC power to the front-end converter.", "interaction": "Provides power to the AFE.", "category": "Third party", "connection": [ "AFE" ] }, { "name": "1-Phase AC Input", "function": "Auxiliary AC power source for control and support circuitry.", "theory_of_operation": "Supplies single-phase AC power to the auxiliary supply subsystem.", "interaction": "Provides power to the Auxiliary Power Supply.", "category": "Third party", "connection": [ "Auxiliary Power Supply" ] }, { "name": "Single or Multi Cell Battery", "function": "Battery under formation, testing, conditioning, or charging.", "theory_of_operation": "Receives controlled charge and discharge energy from the formation system.", "interaction": "Connected to the cell switching system and monitored by sensing circuits.", "category": "Third party", "connection": [] } ], "interconnections": [ {"source": "1-3 Phase AC Input", "target": "AFE"}, {"source": "AFE", "target": "Isolated DC/DC"}, {"source": "Isolated DC/DC", "target": "DC-DC Stage"}, {"source": "Isolated DC/DC", "target": "Voltage, Temp & Current Sensing"}, {"source": "Isolated Gate Driver", "target": "AFE"}, {"source": "Isolated Gate Driver", "target": "Isolated DC/DC"}, {"source": "DC-DC Stage", "target": "Cell Switching"}, {"source": "Cell Switching", "target": "Single or Multi Cell Battery"}, {"source": "DC-DC Stage", "target": "Voltage, Temp & Current Sensing"}, {"source": "Cell Switching", "target": "Voltage, Temp & Current Sensing"}, {"source": "Voltage, Temp & Current Sensing", "target": "Controller"}, {"source": "GaN/FET Gate Driver", "target": "DC-DC Stage"}, {"source": "GaN/FET Gate Driver", "target": "Cell Switching"}, {"source": "Controller", "target": "Voltage, Temp & Current Sensing"}, {"source": "Controller", "target": "GaN/FET Gate Driver"}, {"source": "GaN/FET Gate Driver", "target": "Controller"}, {"source": "Controller", "target": "Interface Components"}, {"source": "Interface Components", "target": "Controller"}, {"source": "Controller", "target": "Isolated Gate Driver"}, {"source": "Controller", "target": "Communication"}, {"source": "Communication", "target": "Controller"}, {"source": "1-Phase AC Input", "target": "Auxiliary Power Supply"}, {"source": "Auxiliary Power Supply", "target": "Isolated Gate Driver"}, {"source": "Auxiliary Power Supply", "target": "LV DC/DC Conversion"}, {"source": "LV DC/DC Conversion", "target": "Controller"}, {"source": "Communication", "target": "Ethernet"}, {"source": "Communication", "target": "CAN-FD"}, {"source": "Communication", "target": "RS485"} ], "Last_update": "2026-07-17",

Iso DC/DC - Block

产品

• High Voltage GaN FETs
  • NTBL023N65GN1

    Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 650V, 16 mOhm

  • NTBT023N65GN1

    Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 650V, 16 mOhm

  • NTBL035N65GN1

    Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 650V, 27 mOhm

  • NTBT050N65GN1

    Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 650V, 39 mOhm

• 碳化硅 (SiC) MOSFET
  • NTBL023N065M3S

    Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650 V, M3S, TOLL

  • NTBG023N065M3S

    Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, D2PAK-7L

  • NTH4L023N065M3S

    Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L

  • NTBL032N065M3S

    Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TOLL

• 碳化硅 (SiC）二极管
  • FFSB0665B

    Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, D2PAK-2L

  • FFSP1065B

    Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, TO-220-2L

• 碳化硅（SiC）Cascode JFET
  • UJ4SC075005L8S

    Silicon Carbide (SiC) Cascode JFET - EliteSiC, 5.4 mohm, 750V, TOLL

  • UJ4SC075010L8S

    Silicon Carbide (SiC) Cascode JFET - EliteSiC, 10.7 mohm, 750V, TOLL

  • UJ4C075018K4S

    Silicon Carbide (SiC) Cascode JFET - EliteSiC, 18 mohm, 750V, TO-247-4L

  • UJ4C075023L8S

    Silicon Carbide (SiC) Cascode JFET - EliteSiC, 23 mohm, 750V, TOLL

• 高压MOSFET
  • NTHL017N60S5H

    Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 75 A, 17.9 mΩ, TO-247

  • NTH4LN019N65S3H

    Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 75 A, 19.3 mΩ, TO-247 narrow 4lead

  • FCH023N65S3L4

    功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，75 A，23 mΩ，TO-247 4lead

  • NTH4L040N65S3F

    Power MOSFET, N-Channel, SUPERFET^® III, FRFET^®, 650 V, 65 A, 40 mΩ, TO-247 4lead

技术文档

• Application Notes
  • AND90204/D - onsemi EliteSiC Gen 2 1200 V SiC MOSFET M3S Series
  • AND90415/D - Using Cascode SiC JFETs in LLC Primary
  • AND90333/D - SiC JFET Surface Mount Technology Devices
  • AND90387/D - Choosing the Correct Semiconductor Technology for 800 V
  • AND90315/D - Using SiC JFET SPICE Model in LTSPICE
  • AND90325/D - ESD Ratings of SiC FETs and Cascode JFETs
  • AND90320/D - SiC Cascode JFETs: ​​Gate Drive and Protection of Three-Level Inverters​
  • AND90326/D - Improvements in On-board Charger Performance Using the Latest SiC Cascode JFET Technology
  • AND90327/D - Paralleling SiC Cascode JFETs
  • AND90319/D - Switching Fast SiC Cascode JFETs with a Snubber
  • AND90318/D - The Impact of Topology on Solar Inverter Efficiency: A Study Using onsemi SiC Cascodes and Diodes
  • AND90323/D - How to Slow Down dV/dt During Switching​​​ Using SiC Cascode JFETs
  • AND90322/D - SiC Cascode JFETs: A Comparative Analysis of Inverter Topologies and Modulation Techniques for Enhanced Efficiency
  • AND90328/D - Cascode Primer Operation of the SiC Cascode JFET
  • AND90334/D - From Continuous-Time Domain to Microcontroller Code
  • AND90324/D - How to Achieve 99.3% Efficiency in 3.6 kW Totem-pole PFC Using 750 V Gen 4 SiC Cascode JFETs​
  • AND90332/D - ​​SiC JFET Through-Hole Lead Bending​
  • AND90331/D - Soldering and Rework of SiC JFET THT Devices
  • AN-9010/D - MOSFET Basics
  • AN-4163 - Shielded Gate POWERTRENCH® MOSFET Datasheet Explanation
  • AN-9034 - Power MOSFET Avalanche Guideline
  • AN-9056 - Using Fairchild Semiconductor Dual Cool™ MOSFETs
  • AN-4161 - Practical Considerations of Trench MOSFET Stability when Operating in Linear Mode
  • AN-7515 - A Combined Single-Pulse and Repetitive UIS Rating System
  • AN-9005 - Driving and Layout Design for Fast Switching Super-Junction MOSFETs
  • AN-1026 - Maximum Power Enhancement Techniques for SuperSOT™-6 Power MOSFETs
  • AN-9067 - Analysis of MOSFET Failure Modes in LLC Resonant Converter
  • AN-6099 - New PowerTrench® MOSFET with Shielded Gate Technology Increases System Efficiency and Power Density in Synchronous Rectification Applications
  • AN-7525 - PCB Land Pattern Design and Surface Mount Guidelines for MicroFET™ Packages
  • AN-5232 - New Generation Super-Junction MOSFETs, SuperFET® II and SuperFET® II Easy Drive MOSFETs for High Efficiency and Lower Switching Noise
• Collateral Brochure
  • BRD8095/D - Overcoming the Challenges of Silicon Carbide to Ensure Application Success
  • BRD8093/D - Power Supply Solutions
• Data Sheet
  • NTBL023N065M3S/D - Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TOLL
  • NTBG023N065M3S/D - Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, D2PAK-7L
  • NTH4L023N065M3S/D - Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L
  • NTBL032N065M3S/D - Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TOLL
  • UJ4SC075005L8S/D - Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, H‐PDSO‐F8, 750 V, 5.4 mohm
  • UJ4SC075010L8S/D - Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TOLL, 750V, 10.7 mohm
  • UJ4C075018K4S/D - Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO-247-4L, 750 V, 18 mohm
  • UJ4C075023L8S/D - Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, H‐PDSO‐F8, 750 V, 23 mohm
  • FFSB0665B/D - Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, D2PAK-2L
  • FFSP1065B/D - Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, TO-220-2L
  • NTHL017N60S5H/D - MOSFET - Power, Single N-Channel, SUPERFET, FAST, TO247
  • NTH4LN019N65S3H/D - MOSFET - Power, N-Channel, SUPERFET III, FAST
  • FCH023N65S3L4/D - MOSFET – Power, N-Channel, SUPERFET® III, Easy Drive 650 V, 75 A, 23 mΩ
  • NTH4L040N65S3F/D - MOSFET – Power, N-Channel, SUPERFET® III, FRFET® 650 V, 65 A, 40 mΩ
  • NTBL023N65GN1/D - Enhancement Mode Gallium Nitride (GaN) HEMT 650 V, 16 mΩ, 92 A, PDSO‐F9
  • NTBT023N65GN1/D - Enhancement Mode Gallium Nitride (GaN) HEMT
  • NTBL035N65GN1/D - Enhancement Mode Gallium Nitride (GaN) HEMT 650 V, 27 mΩ, 64 A, PDSO‐F9
  • NTBT050N65GN1/D - Enhancement Mode Gallium Nitride (GaN) HEMT 650 V, 39 mΩ, 40 A, PDSO‐G16
• Eval Board
  • EVBUM2901/D - Hotplate and Double Pulse Generator Evaluation Board User's Manual | Manual
  • EVBUM2838/D - Evaluation Board for 1200 V SiC MOSFET M3S in D2PAK-7LD showing Benefit of IMS PCB User's Manual | Manual
  • EVBUM2897/D - Discrete Double Pulse Tester Evaluation Board User's Manual | Manual
  • EVBUM2909/D - Discrete Double Pulse Tester - Extension Daughter Cards Set Evaluation Board User's Manual | Manual
• Models
  • ONSEMI_SiCMOSFET_650M3S_pspice - ONSEMI_SiCMOSFET_650M3S_pspice
  • ONSEMI_SiCMOSFET_650M3S_ltspice - ONSEMI_SiCMOSFET_650M3S_ltspice
  • ONSEMI_SiCMOSFET_650M3S_simetrix - ONSEMI_SiCMOSFET_650M3S_simetrix
  • UJ4SC075005L8S (Spice Model) - UJ4SC075005L8S (Spice Model)
  • UJ4SC075010L8S (Spice Model) - UJ4SC075010L8S (Spice Model)
  • UJ4C075018K4S (Spice Model) - UJ4C075018K4S (Spice Model)
  • UJ4C075023L8S (Spice Model) - UJ4C075023L8S (Spice Model)
  • ONSEMI_SiCDIODE_650V_GEN1P5(LTSpice) - ONSEMI SiC JBS 650V GEN1P5(LTSpice)
  • ONSEMI_SiCDIODE_650V_GEN1P5(PSpice Model) - ONSEMI SiC JBS 650V GEN1P5(PSpice)
  • ONSEMI_SiCDIODE_650V_GEN1P5(SIMetrix) - ONSEMI SiC JBS 650V GEN1P5(SIMetrix)
  • ONSEMI_SUPERFET5_600_FAST_ltspice - ONSEMI_SUPERFET5_600_FAST_ltspice
  • ONSEMI_SUPERFET5_600_FAST_pspice - ONSEMI_SUPERFET5_600_FAST_pspice
  • ONSEMI_SUPERFET5_600_FAST_simetrix - ONSEMI_SUPERFET5_600_FAST_simetrix
  • ONSEMI_SUPERFET3_650_FAST_simetrix - ONSEMI_SUPERFET3_650_FAST_simetrix
  • ONSEMI_SUPERFET3_650_FAST_pspice - ONSEMI_SUPERFET3_650_FAST_pspice
  • ONSEMI_SUPERFET3_650_FAST_ltspice - ONSEMI_SUPERFET3_650_FAST_ltspice
  • ONSEMI_SUPERFET3_650_simetrix.zip - SIMetrix SPICE model for SuperFET3 650V
  • ONSEMI_SUPERFET3_650_pspice.zip - PSPICE model and symbol for SuperFET3 650V
  • ONSEMI_SUPERFET3_650_ltspice.zip - LTspice model and symbol for SuperFET3 650V
  • ONSEMI_SUPERFET3_650_FRFET_pspice - Pspice models/symbols for ONSemi SuperFET3 650V FRFET products
  • ONSEMI_SUPERFET3_650_FRFET_simetrix - Simetrix models/symbols for ONSemi SuperFET3 650V FRFET products
  • ONSEMI_SUPERFET3_650_FRFET_ltspice - LTspice models/symbols for ONSemi SuperFET3 650V FRFET products
  • onsemi_GaN_650LGaN (LTspice Model) - onsemi_GaN_650LGaN (LTspice Model)
  • onsemi_GaN_650LGaN (SIMetrix Model) - onsemi_GaN_650LGaN (SIMetrix Model)
• Package Drawing
  • 100DC - H-PSOF8L 10.38x9.90x2.30, 1.20P
  • 418BJ - D2PAK7 (TO-263-7L HV)
  • 340CJ - TO-247-4LD
  • 740AA - H-PDSO-F8 9.90x10.38x2.30, 1.20P
  • 340AN - TO247-4 15.90x20.96x5.03, 5.44P
  • 418BK - D2PAK2 (TO-263-2L)
  • 340BB - TO-220-2LD
  • 340CX - TO-247-3LD
  • 340CW - TO-247 4-LEAD, THIN LEADS
  • 207AA - PDSO-F9 10.38x9.90x2.30, 1.20P
  • 208AA - PDSO-G16 9.90x10.15x2.30, 1.20P
• System Solution Guide
  • SSG8202/D - Switched-Mode Power Supply (SMPS)
  • SSG8226/D - AI Data Center
  • SSG8209/D - Uninterruptible Power Supply (UPS)
  • SSG8233/D - Telecom Base Stations
  • SSG8204/D - Solar Inverter
  • SSG8207/D - Ultra Fast EV Charger
  • SSG8208/D - Battery Energy Storage System
  • SSG8227/D - Green Hydrogen Electrolyzer
  • SSG8232/D - Welding Equipment
  • SSG8216/D - Industrial Motor Drive
  • SSG8222/D - USB-C Battery Charger
  • SSG8203/D - Heat Pumps
• Tutorial
  • TND6502/D - Enabling Fast Electric Vehicle Charging Tutorial
  • TND6503/D - Improving Server and Industrial Power Supplies with SiC JFETs
  • TND6533/D - GaNEXUS - Where Power Performance Meets System Design
  • TND6522/D - GaN Power Architectures Guide
• User's Manual
  • UM70114/D - SiC Cascode JFET & Module User Guide
• Video
  • WVD18005/D - Powering AI Data Centers with 650V EliteSiC M3S and PowerTrench® T10 MOSFETs
  • WVD17852/D - How Epi Layer Sets RDS(ON) and VDS(max)
  • WVD17866/D - Complete End-to-End Silicon Carbide (SiC) Supply Chain
  • WVD17858/D - onsemi’s Silicon Carbide (SiC) Technologies Enable Next Generation Energy Infrastructure System Designs
  • WVD18035/D - Harnessing the Power of SiC: Advanced UPS Design
  • WVD18040/D - Enhancing Power Designs with onsemi's Simulation Tools
  • WVD17918/D - Novel Industry-First Self-Service PLECS Model Generator and Elite Power Simulator Accurate For Soft and Hard-Switching
  • WVD18037/D - Introducing onsemi's New Double Pulse Evaluation System
  • WVD18078/D - Cascode JFETs Power Next-Gen AI and Industrial Power Supplies
  • WVD18076/D - Webinar - 12kW Power Supply Design with CJFETs in AI Data Centers
  • WVD18055/D - onsemi SiC JFETs: Higher Efficiency, Smaller Size, Lower Costs
  • WVD18071/D - Webinar - Improving Server and Industrial Power Supplies with SiC JFETs
  • WVD17810/D - Off-Board EV-Charging Solutions
  • WVD18092/D - GaNEXUS - Gallium Nitride for Modern Power Systems
  • WVD18093/D - GaN for AI Power Conversion and Robotics
• White Papers
  • TND6396/D - Silicon Carbide (SiC) - From Challenging Material to Robust Reliability
  • TND6468/D - onsemi EliteSiC 650 V SiC MOSFET M3S Series with Superior Switching Performance
  • TND6440/D - Paralleling SiC MOSFETs Process Impacts and Gate Resistors Setup
  • TND6428/D - Designing DC Fast Chargers (DCFC) for Efficiency, Reliability, and Safety
  • TND6475/D - SiC Cascode JFETs: Easing the Transition from Silicon to Silicon Carbide

评估板/套件

• EVBUM2901G-EVB

  Evaluation Board for Double Pulse Testing discrete solutions

• EVBUM2909G-EVK

  Discrete Double Pulse Tester – Extension Daughter Cards Set

FAQs