Silicon Carbide (SiC) Diodes | FFSH20120A-F155

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-2L

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Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

  • Industrial

  • UPS / ESS
  • Solar
  • EV Charger

  • Max Junction Temperature 175 °C
  • Avalanche Rated 200 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery

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Elite Power Simulator

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FFSH20120A-F155

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CAD Model

Pb

A

H

P

TO−247−2LD

340DC

NA

0

TUBE

450

F

D1

Single

1200

20

1.75

135

400

Price N/A

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可靠性数据

Die Related Summary Data

Device: FFSH20120A-F155

Equivalent to wafer fab process: SIC

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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