Silicon Carbide (SiC) Diodes | FFSP2065BDN-F085

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-220-3L

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EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.

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  • Max Junction Temperature 175°C
  • Avalanche Rated 49 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery/No Forward Recovery
  • AEC−Q101 Qualified
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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FFSP2065BDN-F085

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Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

Y

D2

Common Cathode

650

20

1.7

42

40

$2.9325

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