Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-220-3L

添加至我的收藏

概览

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.

  • Automotive HEV−EV Onboard Chargers
  • Automotive HEV−EV DC−DC Converters
  • Automotive HEV-EV Onboard Chargers
  • Max Junction Temperature 175°C
  • Avalanche Rated 49 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery/No Forward Recovery
  • AEC−Q101 Qualified
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

产品列表

如需购买产品或样品,请先登录您的安森美账号。

搜寻

Close Search

产品:

1

分享

Product Groups:

Orderable Parts:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Configuration

VRRM (V)

IF(ave) (A)

VF (Max)

IFSM (A)

IR (Max) (µA)

Reference Price

FFSP2065BDN-F085

Loading...

Active

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

Y

D2

Common Cathode

650

20

1.7

42

40

$2.9325

More Details

Show More

1-25 of 25

Products per page

Jump to :