Silicon Carbide (SiC) JFETs | UF3N120007K4S

Silicon Carbide (SiC) JFET - EliteSiC, 7.1 mohm, 1200V, TO-247-4L

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The UF3N120007K4S is a 1200 V, 7.1mohm high-performance Gen
3 normally-on SiC JFET transistor. This device exhibits ultra-low on
resistance (RDS(on)) in a TO-247-4L package, making it an ideal fit to
address the challenging thermal constraints of solid-state circuit
breakers and relay applications. Additionally, the JFET is a robust
device technology capable of the high-energy switching required in
circuit protection applications.

  • Solid State / Semiconductor Circuit Breaker
  • Solid state / Semiconductor Relay
  • Battery Disconnects
  • Surge Protection
  • Inrush Current Control

  • Circuit Breaker
  • Battery Charger
  • Solar
  • Energy Storage System
  • Industrial Power Supply

  • Single digit RDS(on)
  • Operating temperature: 175°C (max)
  • High pulse current capability
  • Excellent device robustness
  • Silver-sintered die attach for excellent thermal resistance
  • RoHS compliant

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ID(peak) (A)

Typical RDS(on)

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UF3N120007K4S

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Pb

A

H

P

TO-247-4

340AN

NA

0

TUBE

600

F

1200

550

7.1

TO-247-4L

830

368

175

N

$47.5855

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