Silicon Carbide (SiC) MOSFETs | NTBG045N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L

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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Converter
  • Boost Inverter

  • UPS
  • Solar
  • Power Supply

  • High Junction Temperature
  • 100% UIL Tested
  • RoHS Compliant
  • High Speed Switching and Low Capacitance
  • 650V rated
  • Max RDS(on) = 52.4 mΩ at Vgs = 18V, Id = 20A

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NTBG045N065SC1

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Pb

A

H

P

D2PAK7 (TO-263-7L HV)

418BJ

1

245

REEL

800

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M2

650

62

31

105

168

175

$6.3358

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Die Related Summary Data

Device: NTBG045N065SC1

Equivalent to wafer fab process: SIC

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平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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