Silicon Carbide (SiC) MOSFETs | NTC040N120SC1
概览
Silicon Carbide (SiC) MOSFET uses a completely new technologythat provide superior switching performance and higher reliabilitycompared to Silicon. In addition, the low ON resistance and compactchip size ensure low capacitance and gate charge. Consequently,system benefits include highest efficiency, faster operation frequency,increased power density, reduced EMI, and reduced system size.
- Boost Inverter
- PV Charging
- Motor Drives
- UPS
- Charging Stations
- 1200 V
- High Speed Switching with Low Capacitance
- 100% UIL Tested
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NTC040N120SC1
量产中
Pb
A
H
P
-
-
NA
0
MTFRM
1
Yes
M1
1200
40
40
90.5
140
175
$11.1095
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