Silicon Carbide (SiC) MOSFETs | NTC160N120SC1

Silicon Carbide MOSFET, N‐Channel, 1200 V, 160 mΩ, Bare Die

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Silicon Carbide (SiC) MOSFET uses a completely new technologythat provide superior switching performance and higher reliabilitycompared to Silicon. In addition, the low ON resistance and compactchip size ensure low capacitance and gate charge. Consequently,system benefits include highest efficiency, faster operation frequency,increased power density, reduced EMI, and reduced system size.

  • Boost Inverter
  • PV Charging
  • Motor Drives

  • UPS
  • Charging Stations

  • 1200 V
  • High Speed Switching with Low Capacitance
  • 100% UIL Tested

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NTC160N120SC1

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已停产

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NA

0

MTFRM

1

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M1

1200

10

160

24.2

39.1

175

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