Silicon Carbide (SiC) MOSFETs | NTC160N120SC1

Silicon Carbide MOSFET, N‐Channel, 1200 V, 160 mΩ, Bare Die

已停产

数据表

购买

概览

Silicon Carbide (SiC) MOSFET uses a completely new technologythat provide superior switching performance and higher reliabilitycompared to Silicon. In addition, the low ON resistance and compactchip size ensure low capacitance and gate charge. Consequently,system benefits include highest efficiency, faster operation frequency,increased power density, reduced EMI, and reduced system size.

  • Boost Inverter
  • PV Charging
  • Motor Drives
  • UPS
  • Charging Stations
  • 1200 V
  • High Speed Switching with Low Capacitance
  • 100% UIL Tested

工具和资源

与NTC160N120SC1相关的产品服务、工具和其他资源

CAD Model

CAD模型

物质成分

产品更改通知

产品参数及购买信息

搜寻

Close Search

产品:

1

分享

排序方式

产品系列:

┗

可订购器件:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

参考价格

NTC160N120SC1

联系销售

已停产

CAD Model

Pb

A

H

P

-

-

NA

0

MTFRM

1

No

M1

1200

10

160

24.2

39.1

175

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

支持服务

联系安森美销售团队获得支持，查询或者对比产品细节。