Silicon Carbide (SiC) MOSFETs | NTH4L020N120SC1
概览
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
- PFC
- Boost Inverter
- Motor Drives
- UPS
- Solar Units
- Charging Stations
- Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A
- High Speed Switching and Low Capacitance
- 100% UIL Tested
- 1200V Rated
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