Silicon Carbide (SiC) MOSFETs | NTH4L023N065M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L

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The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

  • Industrial
  • Cloud system

  • UPS / ESS
  • Solar
  • EV Charger
  • AI Data center

  • TO-247-4L Package with Kelvin source configuration
  • Excellent FOM [ = Rdson * Eoss ]
  • Ultra Low Gate Charge (QG(tot) = 69 nC)
  • High Speed Switching with Low Capacitance (Coss = 153 pF)
  • 15V to 18V Gate Drive
  • Typ. RDS(on) = 23 mΩ at Vgs = 18V
  • 100% Avalanche Tested
  • Halide Free and RoHS Compliant

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NTH4L023N065M3S

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Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

F

M3S

650

67

23

69

153

175

$5.9443

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