Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L

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概览

The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

  • Industrial
  • Cloud system
  • UPS / ESS
  • Solar
  • EV Charger
  • AI Data center
  • TO-247-4L Package with Kelvin source configuration
  • Excellent FOM [ = Rdson * Eoss ]
  • Ultra Low Gate Charge (QG(tot) = 69 nC)
  • High Speed Switching with Low Capacitance (Coss = 153 pF)
  • 15V to 18V Gate Drive
  • New M3S technology: 23 mohm RDS(ON) with low Eon and Eoff losses
  • 100% Avalanche Tested
  • Halide Free and RoHS Compliant

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Blocking Voltage BVDSS (V)

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NTH4L023N065M3S

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CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

F

M3S

650

40

23

69

153

175

$5.9443

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