Silicon Carbide (SiC) MOSFETs | NTH4L028N170M1

碳化硅（SiC）MOSFET – EliteSiC系列，28mohm，1700V，M1，TO-247-4L封装

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碳化硅（SiC）MOSFET全新系列，1700V M1平面型EliteSiC MOSFET，优化用于高速开关应用。平面工艺在负栅极驱动电压和栅极上的关断尖峰下都能够可靠运行。EliteSiC碳化硅系列在用20V栅极驱动时能提供最佳性能，但同样适用18V栅极驱动。

  • AC-DC转换
  • DC-AC转换
  • DC-DC转换

  • 光伏逆变器
  • 不间断电源（UPS）
  • 固态变压器
  • 中压电网设备
  • 储能系统
  • 氢气电解器
  • 燃料电池

  • 用于低共源电感的TO247-4LD封装
  • 18V至20V栅极驱动
  • 全新1700V M1技术：28mohm RDS(ON)，低EON和低EOFF损耗
  • 100%通过雪崩测试

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NTH4L028N170M1

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A

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TO-247-4

340CJ

NA

0

TUBE

450

F

M1

1700

81

28

200

200

175

$26.2085

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