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碳化硅(SiC)MOSFET全新系列,1700V M1平面型EliteSiC MOSFET,优化用于高速开关应用。平面工艺在负栅极驱动电压和栅极上的关断尖峰下都能够可靠运行。EliteSiC碳化硅系列在用20V栅极驱动时能提供最佳性能,但同样适用18V栅极驱动。
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