Silicon Carbide (SiC) MOSFETs | NTH4L060N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L

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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • Telecommunication
  • Cloud system
  • Industrial

  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS

  • TJ = 175°C
  • Ultra Low Gate Charge (Typ. Qg = 74 nC)
  • High Speed Switching with Low Capacitance (Coss = 133 pF)
  • Zero reverse recovery current of body diode
  • Kelvin Source configuration
  • Max RDS(on) = 44 mΩ at Vgs = 18V
  • 100% UIL Tested
  • RoHS Compliant

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NTH4L060N065SC1

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量产中

CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

No

M2

650

47

44

74

133

175

$6.1976

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