Silicon Carbide (SiC) MOSFETs | NTHL040N120M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-3L

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The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. 

  • Industrial

  • UPS / ESS
  • Solar
  • EV Charger

  • Excellent FOM [ = Rdson * Eoss ]
  • Ultra Low Gate Charge (QG(tot) = 75 nC)
  • High Speed Switching with Low Capacitance (Coss = 80 pF)
  • 15V to 18V Gate Drive
  • New M3S technology: 40 mohm RDS(ON) with low Eon and Eoff losses
  • 100% Avalanche Tested
  • Halide Free and RoHS Compliant

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NTHL040N120M3S

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TO-247-3LD

340CX

NA

0

TUBE

450

F

M3S

1200

54

40

75

80

175

$5.5704

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