Silicon Carbide (SiC) MOSFETs | NVBG040N120M3S

Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L

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1200V M3S planar EliteSiC MOSFET is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

  • On Board Charger (OBC)
  • DC/DC converters for EV/HEV
  • Automotive EV/HEV
  • Typical RDS(on) = 40mΩ at Vgs =18V, Id = 25A
  • Qualified for Automotive According to AEC−Q101
  • New M3S technology: 40.8mohm RDS(ON) with low EON and EOFF losses
  • 15V to 18V Gate Drive
  • Devices are Pb−Free and are RoHS Compliant

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参考价格

NVBG040N120M3S

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量产中

CAD Model

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

418BJ

1

260

REEL

800

No

M3S

1200

57

40

75

80

175

$11.773

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可靠性数据

Die Related Summary Data

Device: NVBG040N120M3S

Equivalent to wafer fab process: SIC

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

32191536553

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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