Silicon Carbide (SiC) MOSFETs | NVH4L040N120SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L

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概览

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • On Board Charger (OBC)
  • DC DC Inverter
  • Automotive EV/HEV
  • Max RDS(on) = 56mΩ at Vgs = 20V, Id = 35A
  • Qualified for Automotive According to AEC−Q101
  • High Speed Switching and Low Capacitance
  • Devices are Pb−Free and are RoHS Compliant

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参考价格

NVH4L040N120SC1

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量产中

CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

Yes

M1

1200

58

40

106

137

175

$14.8841

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可靠性数据

Die Related Summary Data

Device: NVH4L040N120SC1

Equivalent to wafer fab process: SIC

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

32191536553

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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