碳化硅 MOSFET,N 沟道,1200 V,80 mΩ,TO247−3L

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碳化硅 (SiC) MOSFET 使用全新技术,能够提供卓越的开关性能,且比硅具有更高的可靠性。 另外,低导通电阻和紧凑的芯片尺寸可确保低电容和低门极电荷。 因此,系统优点有:最高效率、更快的运行频率、提高了功率密度、降低了 EMI,以及减小了系统尺寸。

  • PFC
  • OBC
  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
  • Automotive Auxiliary Motor Drive
  • 1200V rated
  • Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested
  • Qualified for Automotive According to AEC−Q101
  • Devices are Pb−Free and are RoHS Compliant

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NVHL080N120SC1

Active, Not Rec

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

Y

M1

1200

44

80

56

80

175

$9.3543

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