Silicon Carbide MOSFET, N‐Channel, 1200 V, 160 mΩ, TO247−3L

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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Power
  • On Board Charging
  • EV/HEV
  • 1200V rated
  • High Speed Switching and Low Capacitance
  • Qualified for Automotive According to AEC−Q101

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NVHL160N120SC1

Active

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

Y

M1

1200

26

160

24

40

175

$7.0549

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