N 沟道PowerTrench® MOSFET 150V,110A,5.5mΩ

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N 沟道 Power Trench® MOSFET 150V,110A,5.5 mΩ,此款最新的屏蔽门极 PowerTrench® MOSFET 具有更小的 QSYNC 和软反向恢复本征体二极管性能,开关速度快,可大幅提高同步整流的效率。

  • Switching Power Supplies
  • Power switches (High side driver, Low side driver, H-Bridges, etc)
  • 48V systems
  • Motor Control
  • DC/DC Converter
  • Load Switch
  • 一般 rDS(on) = 5.5 mΩ(VGS=10V、ID=80A 时)
  • 一般 Qg(tot) = 80nC(VGS = 10V、ID = 80A)
  • 符合 AEC Q101 标准
  • UIS 能力
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDB075N15A-F085

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Last Shipments

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

245

REEL

800

N

150

7.5

N-Channel

Single

±20

4

110

333

-

-

-

80

5595

Price N/A

More Details

FDB075N15A-F085C

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Last Shipments

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

245

REEL

800

F

150

7.5

N-Channel

Single

±20

4

110

333

NA

NA

NA

80

5595

Price N/A

More Details

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