FDMD8630

双 N 沟道，PowerTrench® MOSFET，30 V， 167 A，1.0 mΩ

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CAD模型

概览

此封装在共源配置中集成了两个内部连接的 N 沟道器件。因此实现了极低的封装寄生，以及通向底部共源片的优化热路径。提供了极小的占地面积 (5 x 6 mm)，实现了更高的功率密度。

应用

Isolated DC-DC Synchronous Rectifier
Common Ground Load Switches

特性

Common Source Configuration to Eliminate PCB Routing
Large Source Pad on Bottom of Package for Enhanced Thermals
Ideal for Flexible Layout in Secondary Side Synchronous Rectification

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMD8630

Obsolete

PQFN-8

483AS

260

REEL

3000

Q1=Q2=1

N-Channel

Dual

167

Q1=Q2=1.3

8.8

7090

Price N/A

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MOSFETs | FDMD8630

双 N 沟道，PowerTrench® MOSFET，30 V， 167 A，1.0 mΩ

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