MOSFETs | FDP8N50NZ

功率 MOSFET，N 沟道，UniFETTM II，500 V，8 A，850 mΩ，TO-220

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概览

UniFETTM II MOSFET 是基于先进的平面条纹和 DMOS 技术的高压 MOSFET 系列。此先进的 MOSFET 系列在平面 MOSFET 中具有最小的导通电阻，同时可提供卓越的开关性能和更高的雪崩能量强度。另外，内部门极电源 ESD 二极管使得 UniFET II MOSFET 可承受 2kV 以上的 HBM 浪涌应力。此器件系列适用于开关电力转换器应用，如功率因数校正 (PFC)、平板显示屏 (FPD) TV 电源、ATX 和电子灯镇流器。

  • This product is general usage and suitable for many different applications.
  • LCD / LED TV
  • Lighting
  • Uninterruptible Power Supplies
  • AC-DC Power Supplies
  • RDS(on) = 770mΩ （典型值）@ VGS = 10V, ID = 4A
  • 低栅极电荷（典型值 14nC）
  • 低 Crss（典型值 5pF）
  • 100% 经过雪崩击穿测试
  • 提高了 dv/dt 处理能力
  • 改进了 ESD 防护能力
  • 符合 RoHS 标准

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MSL Temp (°C)

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ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDP8N50NZ

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

500

850

N-Channel

Single

±30

5

8

130

-

-

-

14

565

Price N/A

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