Silicon Carbide (SiC) Cascode JFETs | UF4C120070B7S

Silicon Carbide (SiC) Cascode JFET - EliteSiC, 72 mohm, 1200V, D2PAK-7L

量产中

数据表

购买

概览

EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and superjunction devices. Ideal for switching inductive loads

  • EV Charging
  • PV Inverters
  • Power Factor Correction Units
  • Motor Drives
  • induction heating

  • Electric Vehicle
  • Solar Inverter
  • AI/Datacenter Power Supply

  • On-resistance RDS(on)
  • Maximum operating temperature: 175 °C
  • Excellent Reverse Recover
  • Low Gate Charge

工具和资源

与UF4C120070B7S相关的产品服务、工具和其他资源

CAD Model

CAD模型

物质成分

产品更改通知

Elite Power Simulator

产品参数及购买信息

搜寻

Close Search

产品:

1

分享

排序方式

产品系列:

┗

可订购器件:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

VDS(max) (V)

ID(peak) (A)

Typical RDS(on)

Package

Qg (nC)

Output capacitance Coss (pF)

TJ(max) (°C)

Bare Die

参考价格

UF4C120070B7S

联系销售

量产中

CAD Model

Pb

A

H

P

D2PAK-7 / TO-263-7

418BA

1

255

REEL

800

No

1200

25.7

72

D2PAK-7L

37.8

35

175

N

$7.4665

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

支持服务

联系安森美销售团队获得支持，查询或者对比产品细节。