Silicon Carbide (SiC) Cascode JFETs | UF4SC120009K4SH

Silicon Carbide (SiC) Cascode JFET - EliteSiC, 9.1 mohm, 1200V, TO-247-4L

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EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and superjunction devices. Ideal for switching inductive loads

  • EV Charging
  • PV Inverters
  • Power Factor Correction Units
  • Motor Drives
  • induction heating
  • Electric Vehicle
  • Solar Inverter
  • AI/Datacenter Power Supply
  • On-resistance RDS(on)
  • Maximum operating temperature: 175 °C
  • Excellent Reverse Recover
  • Low Gate Charge

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UF4SC120009K4SH

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量产中

CAD Model

Pb

A

H

P

TO247-4LH 15.94x23.45x5.02, 2.54P

340CV

NA

0

TUBE

300

No

1200

120

9.1

TO-247-4L

168

168

175

N

Price N/A

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