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NCP51820: 高性能,650 V 半桥门极驱动器,用于 GaN 电源开关

Datasheet: High Speed Half-Bridge Driver for GaN Power Switches
Rev. 3 (795kB)
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NCP51820 高速门极驱动器用于满足离线、半工电源拓扑结构中驱动增强模式 (e−mode) 和门极抑制晶体管 (GIT) GaN HEMT 电源开关的严格要求。NCP51820 为高压侧驱动提供短路和匹配传播延迟,以及 −3.5 V 至 +650 V(典型值)共模电压范围。为了完全保护 GaN 功率晶体管的门极不会受到过大电压压力,两个驱动级均蚕蛹专门的电压稳压器来准确保持门极源驱动信号幅度。NCP51820 提供独立欠压锁定 (UVLO) 和集成电路高温关断等重要保护功能。
特性   优势
     
  • 650 V, high side and low side gate driver
 
  • Design margin for AC/DC design
  • Fast propagation delay of 50 ns max
 
  • Suitable for high frequency operation
  • Matched propagation delay of 5 ns max
 
  • Increased efficiency and allow paralleling
  • 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry
 
  • Robust design for high switching frequency application
  • Separate source and sink output pin
 
  • Allow control of rise and fall time for EMI tuning
  • Regulated 5.2 V gate driver with independent UVLO for high side and low side output stages
 
  • Optimum driving of GaN power switches and simplify design
  • QFN 4 mm x 4 mm 15 pin packaging and optimized pin out
 
  • Small PCB foot print, reduced parasitic, suitable for high frequency operation
应用   终端产品
  • Resonant converters
  • Half bridge and full bridge converters
  • Active clamp flyback converters
  • Totem pole bridgeless PFC
 
  • Power supply for OLED TV
  • High power gaming adapter
  • USD PD cellphone and notebook travel adapter
  • Server / Cloud Data-center Offline power
  • Industrial inverter and motor drive
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
NCP51820GAN1GEVB Active
Pb-free
NCP51820 GaN driver evaluation board for 650 V, 50 mOhm E-mode GaN HEMT
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NCP51820AMNTWG Active
Pb-free
Halide free
NCP51820, 650 V Half Bridge Gate Driver for GaN Power Switches QFN-15 485FN 1 260 Tape and Reel 4000 $1.1464
市场订货至交货的时间(周) : 8 to 12

Product
Description
Pricing ($/Unit)
Compliance
Status
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Drive Source/Sink Typ (mA)
Rise Time (ns)
Fall Time (ns)
tp Max (ns)
Package Type
NCP51820AMNTWG  
 $1.1464 
Pb
H
 Active   
GaN
2
Half-Bridge
Junction Isolation
650
20
1000 / 2000
2
1.5
50
QFN-15
外形
485FN   
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