MOSFETs | CPH3455

单 N 沟道，功率 MOSFET，35V，3A，104mΩ

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概览

此功率 MOSFET 使用安森美半导体的沟槽技术生产，这是专为最大程度减小门极电荷、降低导通电阻而设计的技术。此器件适用于具有低门极电荷驱动或低导通电阻要求的应用。

  • Load Switch
  • Motor Drive
  • Server, Fridge, DSLR, Transceiver
  • Electronic Bidet Toilet Seat
  • Low On-Resistance :
    RDS(on) = 104mΩ (max) [ID = 1.5A, VGS = 10V]
  • ESD Diode-Protected Gate
  • RoHS compliance
  • 4V drive

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

CPH3455-TL-H

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Last Shipments

CAD Model

Pb

A

H

P

CPH-3

318BA

1

260

REEL

3000

N

35

104

N-Channel

Single

20

2.6

3

1

-

173

3.5

4

186

Price N/A

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