MOSFETs | FCH190N65F_F085

N 沟道，SuperFET II™ FRFET MOSFET 600V，20.6A，190mΩ

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概览

SuperFET® II MOSFET 是全新的高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的卓越性能。此工艺专用于最大程度降低导电损耗，提供卓越的开关性能、dv/dt 速率和更高的雪崩能量。因此，SuperFETII 非常适用于高电压全桥和半桥 DC-DC、交错式升压 PFC、用于 HEV-EV 汽车的升压 PFC 等软开关和硬开关拓扑结构。SuperFET II FRFET® MOSFET 优化的体二极管逆向恢复性能可以消除附加组件，提高系统可靠性。

  • Automotive On Board Charger
  • Automotive DC/DC converter for HEV
  • 典型值 RDS(on) = 148 mΩ（VGS = 10 V, ID = 10 A时）
  • 典型值 Qg(tot) = 63 nC（VGS = 10V, ID = 10 A时）
  • UIS 能力
  • 符合 AEC Q101 要求
  • 符合 RoHS 标准

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCH190N65F-F085

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

650

190

N-Channel

Single

±20

5

20.6

208

-

-

-

63

2447

Price N/A

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