MOSFETs | FCP11N60N

功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，10.8 A，299 mΩ，TO-220

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概览

SupreMOS® MOSFET 是下一代高压超结 (SJ) 技术，采用深沟槽填充工艺，使其与传统的 SJ MOSFET 区分开来。这种先进技术和精确的工艺控制提供了最低的 Rsp 导通电阻、出色的开关性能和坚固性。SupreMOS MOSFET 适用于高频率开关电源转换器应用，如 PFC、服务器/电信电源、FPD TV 电源、ATX 电源和工业电源应用。

  • This product is general usage and suitable for many different applications.
  • RDS(on) = 255mΩ （典型值）@ VGS = 10V, ID = 5.4A
  • 超低栅极电荷（典型值Qg = 27.4nC )
  • 低有效输出电容（典型值Coss.eff = 130pF )
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCP11N60N

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

N

600

299

N-Channel

Single

±30

4

10.8

94

-

-

-

27.4

1130

Price N/A

More Details

FCP11N60N-F102

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

800

N

600

299

N-Channel

Single

±30

4

10.8

94

-

-

-

27.4

1130

Price N/A

More Details

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