N 沟道 SupreMOS® MOSFET 600V, 9A, 385mΩ

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概览

SupreMOS® MOSFET 是飞兆半导体的下一代高压超级结(SJ)技术,该技术采用区别于传统 SJ MOSFET 产品的深沟槽填充工艺。这项先进技术和精密的工艺控制提供了最低的 Rsp on-resistance(导通电阻规格),卓越的开关性能和耐用性。SupreMOS MOSFET 技术适用于高频开关电源转换器应用,如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。

  • This product is general usage and suitable for many different applications.
  • RDS(on) = 330mΩ (典型值)@ VGS = 10V, ID = 4.5A
  • 超低栅极电荷(典型值Qg = 22nC )
  • 低有效输出电容(典型值Coss.eff = 106pF )
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCPF9N60NT

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

N

600

385

N-Channel

Single

±30

4

9

29.8

-

-

-

22

930

Price N/A

More Details

FCPF9N60NTYDTU

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

N

600

385

N-Channel

Single

±30

4

9

29.8

-

-

-

22

930

Price N/A

More Details

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