MOSFETs | FDB8030L

N 沟道，PowerTrench® MOSFET，逻辑电平，30V，80A，4.5mΩ

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概览

此 N 沟道逻辑电平 MOSFET 专用于提高 DC/DC 转换器的总能效，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。与具有相当的 RDS(ON) 规格的其他 MOSFET 相比，此类 MOSFET 开关速度更快，门极电荷更低。因此该 MOSFET 驱动简单，也更安全（即使在非常高的频率下亦是如此），DC/DC 电源设计具有更高的总体能效。

  • This product is general usage and suitable for many different applications.
  • • 80A, 30 V
  • RDS(ON) = 0.0035 Ω@ VGS =10 V
  • RDS(ON) = 0.0045 Ω@ VGS =4.5 V
    • 在高温下指定的临界DC电气参数
    • 耐用的内部源极-漏极二极管使得无需使用外部齐纳二极管瞬态抑制器。
    • 高性能沟道技术可实现极低的RDS(ON)
    • 175°C最大结温额定值
  • Critical DC electrical parameters specified atelevated temperature
  • Rugged internal source-drain diode can eliminate theneed for an external Zener diode transientsuppressor
  • High performance trench technology for extremelylow RDS(ON)

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDB8030L

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Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

N

30

3.5

N-Channel

Single

20

2

80

187

-

4.5

-

120

10500

Price N/A

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