FDD10AN06

N 沟道，PowerTrench® MOSFET，60V，50A，10.5mΩ

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CAD模型

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N 沟道，PowerTrench® MOSFET，60V，50A，10.5mΩ

应用

This product is general usage and suitable for many different applications.

特性

r_DS(ON) = 9.4 mΩ（典型值），V_GS = 10 V，I_D = 50 A
Q_g(tot) =（典型值），V_GS = 10V
低密勒电荷
低 Qrr 体二极管
UIS 能力（单脉冲和重复脉冲）
符合 AEC Q101
符合 RoHS 标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDD10AN06A0-F085

Obsolete

DPAK-3 / TO-252-3

369AS

260

REEL

2500

10.5

N-Channel

Single

±20

135

2837

1840

Price N/A

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MOSFETs | FDD10AN06_F085

N 沟道，PowerTrench® MOSFET，60V，50A，10.5mΩ

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