功率 MOSFET,N 沟道,逻辑电平,UniFETTM,200 V,7.6 A,360 mΩ,DPAK

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UniFETTM MOSFET 是基于平面条纹和 DMOS 技术的高压 MOSFET 系列。此 MOSFET 适用于降低导通电阻,提供更好的开关性能以及更高的雪崩能量强度。此器件系列适用于开关电源转换器应用,如功率因数校正 (PFC)、平板显示屏 (FPD) TV 电源、ATX 和电子灯镇流器。

  • This product is general usage and suitable for many different applications.
  • RDS(on) = 300mΩ (典型值)@ VGS = 10V, ID = 3.8A
  • 低栅极电荷(典型值 12nC)
  • 低 Crss(典型值 11pF)
  • 100% 经过雪崩击穿测试
  • 提高了 dv/dt 处理能力
  • 改进了 ESD 防护能力
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD10N20LZTM

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

200

360

N-Channel

Single

±20

3

7.6

83

-

400

-

12

440

Price N/A

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