MOSFETs | FDD16AN08_F085

N 沟道，UltraFET® Trench MOSFET，75V，50A，13mΩ

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N 沟道，UltraFET® Trench MOSFET，75V，50A，13mΩ

  • 信息娱乐
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  • 信息娱乐
  • 其他
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  • 舒适与便捷
  • 人体电子
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  • 其他车用
  • rDS(ON) = 13mΩ （典型值），VGS = 10 V，ID = 50 A
  • Qg (tot)= 31nC（典型值），VGS = 10V
  • 低米勒电荷
  • 低 Qrr体二极管
  • UIS能力（单脉冲和重复脉冲）
  • 符合AEC Q101
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD16AN08A0-F085

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

75

16

N-Channel

Single

±20

4

50

135

-

-

-

31

1874

Price N/A

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