FDD3510H

双 N 和 P 沟道 PowerTrench® MOSFET，80V

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CAD模型

概览

这些双 N 和 P 沟道增强型功率 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持出色的开关性能。

应用

This product is general usage and suitable for many different applications.

特性

N-Channel: 80V, 13.9A, 80mΩ
P-Channel: -80V, -9.4A, 190mΩ
Q1： N沟道
最大r_DS(on) = 88m? V_GS = 6V, I_D = 4.1A时Q2: P沟道
100%经过UIL测试
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDD3510H

Last Shipments

DPAK-5

369AL

260

REEL

2500

±80

N:80,P:190

Complementary

Dual

±20

Q1: 4, Q2:-3

N:13.9, P: -9.4

Q1: 35, Q2: 32

N: 600, P: 660

Price N/A

产品型号:

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MOSFETs | FDD3510H

双 N 和 P 沟道 PowerTrench® MOSFET，80V

概览

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