MOSFETs | FDD3680

N 沟道，PowerTrench® MOSFET，100V，25A，46mΩ

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概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总能效而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。与具有相当的 RDS(ON) 规格的其他 MOSFET 相比，此类 MOSFET 开关速度更快，门极电荷更低。因此该 MOSFET 驱动简单，也更安全（即使在非常高的频率下亦是如此），DC/DC 电源设计具有更高的总体能效。

  • This product is general usage and suitable for many different applications.
  • 25 A，100 V。
  • RDS(ON) = 46 mΩ @ VGS = 10 V
  • RDS(ON) = 51 mΩ @ VGS = 6 V
  • 低栅极电荷（38nC，典型值）
  • 快速开关速度
  • 高性能沟道技术可实现极低的RDS(ON)
  • 高功率和高电流处理能力

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD3680

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

100

46

N-Channel

Single

±20

4

25

68

-

-

-

38

1735

Price N/A

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