FDD4685_F085

P 沟道，PowerTrench® MOSFET，-40 V，-32 A，35 mΩ

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CAD模型

概览

P 沟道，PowerTrench® MOSFET，-40 V，-32 A，35 mΩ

应用

信息娱乐
便携导航
信息娱乐
其他
传动系
安全和控制
舒适与便捷
人体电子
车辆安全系统
其他车用

特性

V_GS = 10V，ID = 8.4A时，典型r_DS(on) = 23m_Ω
典型r_DS(on) = 30mΩ （V_GS = -4.5V且I_D = -7A时）
Q_g(TOT) = 19nC（典型值）（在V_GS = -5V时）
高性能沟道技术可实现极低的r_DS(on)
符合 RoHS 标准
符合 AEC Q101

物质成分

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDD4685-F085

Obsolete

DPAK-3 / TO-252-3

369AS

260

REEL

2500

-40

P-Channel

Single

±20

-3

-32

1790

Price N/A

FDD4685-F085P

Last Shipments

DPAK-3 / TO-252-3

369AS

260

REEL

2500

-40

P-Channel

Single

±20

-3

-32

1790

Price N/A

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MOSFETs | FDD4685_F085

P 沟道，PowerTrench® MOSFET，-40 V，-32 A，35 mΩ

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