FDD5614P

60V，P 沟道，PowerTrench® MOSFET，-15A，100mΩ

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概览

此 60V P 沟道 MOSFET 使用高压 PowerTrench® 工艺。此产品非常适用于电源管理应用。

应用

This product is general usage and suitable for many different applications.

特性

–15 A, –60 V.
R_DS(ON) = 100 mΩ （V_GS = –10 V 时）
R_DS(ON) = 130 mΩ （V_GS = –4.5 V 时）
快速开关速度
高性能沟道技术可实现极低 R_DS(ON)
高功率和高电流处理能力

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDD5614P

Last Shipments

DPAK-3 / TO-252-3

369AS

260

REEL

2500

-60

100

P-Channel

Single

±20

-3

-15

130

759

Price N/A

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MOSFETs | FDD5614P

60V，P 沟道，PowerTrench® MOSFET，-15A，100mΩ

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