FDD6030L

N 沟道，PowerTrench® MOSFET，30V，12A，14.5mΩ

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CAD模型

概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持低门极电荷，实现卓越的开关性能。

应用

This product is general usage and suitable for many different applications.

特性

12 A, 30V
R_DS(ON) = 14.5 mΩ @ V_GS = 10V
R_DS(ON) = 21.0 mΩ @ V_GS = 4.5V
低栅极电荷
快速开关速度
高性能沟道技术可实现极低的R_DS(ON)

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDD6030L

Obsolete

DPAK-3 / TO-252-3

369AS

260

REEL

2500

14.5

N-Channel

Single

6.5

1230

Price N/A

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MOSFETs | FDD6030L

N 沟道，PowerTrench® MOSFET，30V，12A，14.5mΩ

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