FDD6635

N 沟道，PowerTrench® MOSFET，35V，59A，10mΩ

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CAD模型

概览

此 N 沟道 MOSFET 是使用 PowerTrench® 专属工艺生产的，可提供低 RDS(ON) 和优化的 BVDSS 能力，为应用带来卓越性能优势。

应用

This product is general usage and suitable for many different applications.

特性

59 A, 35V
最大R_DS(ON) = 10 mΩ @ V_GS = 10 V
最大R_DS(ON) = 13 mΩ @ V_GS = 4.5 V
快速开关
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDD6635

Obsolete

DPAK-3 / TO-252-3

369AS

260

REEL

2500

N-Channel

Single

1400

Price N/A

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MOSFETs | FDD6635

N 沟道，PowerTrench® MOSFET，35V，59A，10mΩ

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