FDD6670A

N 沟道，逻辑电平，PowerTrench® MOSFET，30V，66A，8mΩ

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CAD模型

概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总能效而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，在小型封装中实现了低门极电荷、快速开关和极低 RDS(ON)。

应用

This product is general usage and suitable for many different applications.

特性

66 A，30 V。
R_DS(on) = 8 mΩ @ V_GS = 10 V
R_DS(on) = 10 mΩ @ V_GS = 4.5 V
低栅极电荷
快速开关速度
高性能沟道技术可实现极低的R_DS(ON)

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDD6670A

Last Shipments

DPAK-3 / TO-252-3

369AS

260

REEL

2500

N-Channel

Single

1755

Price N/A

产品型号:

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MOSFETs | FDD6670A

N 沟道，逻辑电平，PowerTrench® MOSFET，30V，66A，8mΩ

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