MOSFETs | FDD6N50F

功率 MOSFET，N 沟道，UniFETTM，FRFET®，500 V，5.5 A，1.15 Ω，DPAK

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UniFETTM MOSFET 是基于平面条纹和 DMOS 工艺的高压 MOSFET 系列。此 MOSFET 适用于降低导通电阻，提供更佳的开关性能以及更高的雪崩能量强度。UniFET FRFET® MOSFET 的体二极管的逆向恢复性能由于终生控制而得以提高。其 trr 小于 100nsec，逆向 dv/dt 抗扰度为 15V/ns，而普通 MOSFET 的这两个指标分别为 200nsec 和 4.5V/nsec 以上。因此，在 MOSFET 体二极管的性能非常重要的某些应用中，它可以消除附加组件，提高系统可靠性。此器件系列适用于开关电力转换器应用，如功率因数校正 (PFC)、平板显示屏 (FPD) TV 电源、ATX 和电子灯镇流器。

  • This product is general usage and suitable for many different applications.
  • RDS(on) = 950mΩ （典型值）@ VGS = 10V, ID = 2.75A
  • 低栅极电荷（典型值 15nC）
  • 低 Crss（典型值 6.3pF）
  • 100% 经过雪崩击穿测试
  • 提高了 dv/dt 处理能力
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD6N50FTM

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

500

1150

N-Channel

Single

±30

5

5.5

89

-

-

-

15

720

Price N/A

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