MOSFETs | FDD6N50TM_F085

N 沟道，MOSFET，500V，6A，0.9Ω

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概览

此类 N 沟道增强型电场效应晶体管使用平面条纹 DMOS 专属工艺生产。此先进工艺特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件适用于高能效开关模式电源和有源功率因数校正。

  • 信息娱乐
  • 便携导航
  • 信息娱乐
  • 其他
  • 传动系
  • 安全和控制
  • 舒适与便捷
  • 人体电子
  • 车辆安全系统
  • 其他车用
  • 6A, 500V
  • RDS(on) = 0.9Ω @ VGS = 10 V
  • Low gate charge (typical 12.8 nC)
  • Low Crss (typical 9 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • Qualified to AEC Q101
  • RoHS Compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD6N50TM-F085

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

500

900

N-Channel

Single

±30

5

6

89

-

-

-

12.8

720

Price N/A

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