FDFM2N111

20V集成式P沟道PowerTrench® MOSFET和肖特基二极管

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概览

FDFM2N111将飞兆半导体的 PowerTrench MOSFET 技术所带来的卓越性能与正向压降非常低的肖特基势垒整流器融合在 MicroFET 封装中。
该器件专门设计为标准降压转换器的单封装解决方案。它具有带极低通态电阻的快速开关、低栅极电荷 MOSFET。

应用

This product is general usage and suitable for many different applications.

特性

4 A，20 V
R_DS(ON) = 100 mΩ @ V_GS = 4.5 V
R_DS(ON) = 150 mΩ @ V_GS = 2.5 V
小型 - 0.8 毫米最大值 - 采用新封装 MicroFET 3×3 毫米

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDFM2N111

Obsolete

WDFN-6

511DT

260

REEL

3000

N-Channel

with Schottky Diode

1.5

1.7

150

100

2.7

273

Price N/A

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MOSFETs | FDFM2N111

20V集成式P沟道PowerTrench® MOSFET和肖特基二极管

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