MOSFETs | FDFME3N311ZT

30V Integrated N-Channel PowerTrench® MOSFET and Schottky Diode

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概览

该器件特别设计为一个单封装解决方案，适用于手机和其他超便携应用的升压拓朴。 该器件具有一个带低输入电容、完整栅极电荷和通态电阻的MOSFET。 以及一个独立连接的低正向电压和反向泄漏电流的肖特基二极管，可最大限度地提高效率。
MicroFET 1.6x1.6薄型封装虽然体积小巧，却能提供出色的热性能，非常适合开关和线性模式应用。

  • This product is general usage and suitable for many different applications.
  • VGS = 4.5 V，ID = 1.6 A时，最大rDS(on) = 299 mΩ
  • VGS= 2.5 V，ID = 1.3 A时，最大rDS(on) = 410 mΩ
  • 薄型： 0.55 mm最大值，新的MicroFET 1.6x1.6薄型封装
  • 不含有卤化合物和氧化锑
  • HBM静电放电保护等级为>1600V（注3）
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDFME3N311ZT

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Obsolete

CAD Model

Pb

A

H

P

UDFN-6

517DW

1

260

REEL

5000

N

30

299

N-Channel

with Schottky Diode

12

1.5

1.8

1.4

-

410

-

1

55

Price N/A

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